The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Aug. 07, 2012
Applicants:

Nam-kyu Song, Yongin-si, KR;

Min-seok OH, Yongin-si, KR;

Yun-seok Lee, Yongin-si, KR;

Cho-young Lee, Yongin-si, KR;

Inventors:

Nam-Kyu Song, Yongin-si, KR;

Min-Seok Oh, Yongin-si, KR;

Yun-Seok Lee, Yongin-si, KR;

Cho-Young Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); H01L 31/202 (2013.01); H01L 31/18 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.


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