The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Oct. 20, 2015
Tamura Corporation, Tokyo, JP;
Masaru Takizawa, Tokyo, JP;
Akito Kuramata, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
Abstract
A Schottky barrier diode includes an n-type semiconductor layer including a GaO-based compound semiconductor with n-type conductivity, and an electrode layer that is in Schottky-contact with the n-type semiconductor layer. A first semiconductor layer in Schottky-contact with the electrode layer and a second semiconductor layer having an electron carrier concentration higher than the first semiconductor layer are formed in the n-type semiconductor layer. The second semiconductor layer includes a β-GaOsubstrate including a main plane rotated by an angle not less than 50° and not more than 90° with respect to a (100) plane thereof.