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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412878 B1

PDFFull Text
Date of Patent:
Aug. 09, 2016

Filed:

Jun. 13, 2015

Semiconductor device and manufacturing method thereof

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Koji Ogata, Kanagawa, JP;

Yoshiyuki Kawashima, Kanagawa, JP;

Hiraku Chakihara, Kanagawa, JP;

Tomohiro Hayashi, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/26513 (2013.01); H01L 21/28282 (2013.01); H01L 27/11517 (2013.01); H01L 27/11519 (2013.01); H01L 27/11573 (2013.01); H01L 29/0607 (2013.01); H01L 29/0642 (2013.01); H01L 29/0847 (2013.01); H01L 29/42324 (2013.01); H01L 29/42344 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor device having improved reliability is disclosed. In a semiconductor device according to one embodiment, an element isolation region extending in an X direction has a crossing region that crosses, in plan view, a memory gate electrode extending in a Y direction that intersects with the X direction at right angles. In this case, in the crossing region, a width in the Y direction of one edge side, the one edge side being near to a source region, is larger than a width in the Y direction of the other edge side, the other edge side being near to a control gate electrode.

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