The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Oct. 20, 2014
Applicant:

Sandisk 3d Llc, Milpitas, CA (US);

Inventors:

Wei-Te Wu, Cupertino, CA (US);

Ming-Che Wu, San Jose, CA (US);

Yung-Tin Chen, Milpitas, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 27/115 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6675 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/31111 (2013.01); H01L 21/823885 (2013.01); H01L 27/11526 (2013.01); H01L 27/11573 (2013.01); H01L 29/4908 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/51 (2013.01); H01L 29/66484 (2013.01); H01L 29/66666 (2013.01); H01L 29/78648 (2013.01);
Abstract

Methods for forming a dual gate structure for a vertical TFT are described. The dual gate structure may be formed by performing a first etching process that includes forming a first set of trenches by etching a first set of oxide pillars to a first depth and forming a second set of trenches by etching a second set of oxide pillars to a second depth higher than the first depth, forming a first set of gate structures within the first set of trenches, forming a second set of gate structures within the second set of trenches, performing a second etching process that includes forming a third set of trenches by etching the first set of gate structures from a second initial depth to a third depth and forming a fourth set of trenches by etching the second set of gate structures to a fourth depth higher than the third depth.


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