The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Feb. 08, 2012
In-joon Yeo, Hwaseong-si, KR;
In-Joon Yeo, Hwaseong-si, KR;
Abstract
In a method of manufacturing a semiconductor device, the method comprises: forming a dummy gate pattern on a substrate; and forming first spacers at side surfaces of the dummy gate pattern to expose upper portions of the side surfaces of the dummy gate pattern. Sacrificial film patterns are formed on regions of the upper portions of the side surfaces of the dummy gate pattern which are exposed by the first spacers. Second spacers are formed on the first spacers and the sacrificial film patterns. An interlayer insulating film is formed to cover the substrate, the second spacers and the dummy gate pattern. A top surface of the dummy gate pattern is exposed by planarizing the interlayer insulating film, and a trench is formed by removing the dummy gate pattern and the sacrificial film patterns.