The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Apr. 02, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Mitsuaki Kirisawa, Nagano, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
In aspects of the invention, an n-type epitaxial layer that forms an ntype drift layer is formed on the upper surface of an n-type semiconductor substrate formed by being doped with a high concentration of antimony. A p-type anode layer is formed on a surface of the ntype drift layer. An n-type contact layer is formed with an impurity concentration in the same region as the impurity concentration of the n-type cathode layer, or higher than the impurity concentration of the n-type cathode layer, on the lower surface of the n-type cathode layer. A cathode electrode is formed so as to be in contact with the n-type contact layer. The n-type contact layer is doped with phosphorus and, without allowing complete recrystallization using a low temperature heat treatment of 500° C. or less, lattice defects are allowed to remain.