The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
May. 16, 2013
Denso Corporation, Kariya, Aichi-pref., JP;
Yuichi Takeuchi, Obu, JP;
Naohiro Sugiyama, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a method of manufacturing a silicon carbide semiconductor device having a JFET, after forming a second concave portion configuring a second mesa portion, a thickness of a source region is detected by observing a pn junction between the source region and a first gate region exposed by the second concave portion. Selective etching is conducted on the basis of the detection result to form a first concave portion deeper than the thickness of the source region and configuring a first mesa portion inside of an outer peripheral region in an outer periphery of a cell region, and to make the second concave portion deeper than the second gate region.