The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Aug. 04, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); G02F 1/13624 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/3262 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78609 (2013.01); H01L 27/3248 (2013.01);
Abstract
Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.