The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jun. 29, 2015
Applicant:
Socionext Inc., Kanagawa, JP;
Inventor:
Masaki Tamaru, Kyoto, JP;
Assignee:
SOCIONEXT INC., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 27/118 (2006.01); H01L 21/768 (2006.01); H01L 27/02 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11807 (2013.01); H01L 21/76895 (2013.01); H01L 23/485 (2013.01); H01L 27/0207 (2013.01); H01L 2027/11829 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11875 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.