The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
May. 23, 2013
Jun Saito, Nagoya, JP;
Satoru Machida, Nagakute, JP;
Yusuke Yamashita, Nagoya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
When an IGBT has a barrier layerthat separates an upper body regionfrom a lower body region, conductivity modulation is enhanced and on-resistance decreases. When the IGBT also has a Schottky contact regionthat extends to reach the barrier layer, a diode structure can be obtained. In this case, however, a saturation current increases as well as short circuit resistance decreases. The Schottky contact regionis separated from the emitter regionby the upper body region. By selecting an impurity concentration in the region, an increase in a saturation current can be avoided. Alternatively, a block structure that prevents a depletion layer extending from the regioninto the regionfrom joining a depletion layer extending from the regioninto the regionmay be provided in an area separating the regionfrom the region