The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

May. 15, 2014
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventor:

Hideaki Katakura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/768 (2013.01); H01L 21/76804 (2013.01); H01L 23/525 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A polysilicon fuse is disclosed that is capable of securing good insulation after being cut into small areas. A manufacturing method for the fuse and a small-size and highly-reliable semiconductor device including a polysilicon fuse also are disclosed. By forming a cavity inside a polysilicon portion serving as a melting portion by setting the melting portion of the polysilicon fuse to be a vertical type, a gap is formed between an upper part electrode and the surface of melted polysilicon when the polysilicon fuse is cut off. Because of this gap, good insulation can be secured. By using this polysilicon fuse, a semiconductor device that has a small size and high reliability is provided.


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