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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412693 B1

PDFFull Text
Date of Patent:
Aug. 09, 2016

Filed:

Feb. 06, 2014

Semiconductor device having jumper pattern and blocking pattern

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yoon-Hae Kim, Suwon-si, KR;

Jong-Shik Yoon, Yongin-si, KR;

Hwa-Sung Rhee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Errol Fernandes

Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 23/525 (2006.01); H01L 49/02 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 21/76808 (2013.01); H01L 21/76895 (2013.01); H01L 21/823475 (2013.01); H01L 23/485 (2013.01); H01L 23/5221 (2013.01); H01L 23/5223 (2013.01); H01L 23/5228 (2013.01); H01L 23/53295 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a substrate having a transistor area, a gate structure disposed on the transistor area of the substrate, a first interlayer insulating layer covering the gate structure, a blocking pattern disposed on the first interlayer insulating layer, and a jumper pattern disposed on the blocking pattern. The jumper pattern includes jumper contact plugs vertically penetrating the first interlayer insulating layer to be in contact with the substrate exposed at both sides of the gate structure, and a jumper section configured to electrically connect the jumper contact plugs.

Find Patent Forward Citations

Kim, Yoon-Hae. (2016). Semiconductor device having jumper pattern and blocking pattern (U.S. Patent No. 9412693). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9412693

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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