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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412683 B1

PDFFull Text
Date of Patent:
Aug. 09, 2016

Filed:

Apr. 02, 2015

Semiconductor device having barrier metal layer

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Atsuko Sakata, Mie-ken, JP;

Takeshi Ishizaki, Aichi-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Finnegan, Henderson, Farabow, Garrett & Dunner LLP

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 23/532 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 21/28 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4827 (2013.01); H01L 21/28061 (2013.01); H01L 21/28273 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76856 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 29/456 (2013.01); H01L 29/4941 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor device having an interlayer insulating film, a molybdenum containing layer, a barrier metal layer and a plug material layer is provided. The interlayer insulating film is formed on a substrate or on a conductive layer formed on a substrate. The interlayer insulating film has a hole reaching the substrate or the conductive layer. The molybdenum containing layer is formed in the substrate or in the conductive layer at a bottom portion of the hole. The barrier metal layer is formed on the molybdenum containing layer and on a side surface of the hole. A portion of the barrier metal layer is formed on the side surface contains at least molybdenum. A portion of the barrier metal layer is formed on the molybdenum containing layer includes at least a molybdenum silicate nitride film. The plug material layer is formed via the barrier metal layer.

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