The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Nov. 17, 2015
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huicai Zhong, San Jose, CA (US);

Chao Zhao, Belgium, BE;

Huilong Zhu, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/7684 (2013.01); H01L 21/76898 (2013.01);
Abstract

In a method for manufacturing a semiconductor, a Through Silicon Via (TSV) template wafer and production wafers form a sandwich structure, in which the TSV template wafer has TSV structures uniformly distributed therein, for providing electrical connection between the production wafers to form 3D interconnection. The TSV template wafer is obtained by thinning a semiconductor wafer, which facilitates reducing the difficulty in etching and filling. Connection parts are provided on the TSV template wafer, for convenience of interconnection between the overlying and underlying production wafers, which facilitates reducing the difficulty in alignment and improving the convenience of design of electrical connection for 3D devices.


Find Patent Forward Citations

Zhong, Huicai. (2016). Method for manufacturing semiconductor device (U.S. Patent No. 9412657). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9412657

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