The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Dec. 16, 2014
Applicant:

Qualcomm Switch Corp., San Diego, CA (US);

Inventors:

Michael A. Stuber, Rancho Santa Fe, CA (US);

Stuart B. Molin, Carlsbad, CA (US);

Mark Drucker, Poway, CA (US);

Peter Fowler, Poway, CA (US);

Assignee:

Qualcomm Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/84 (2013.01);
Abstract

A first wafer is provided that includes an insulating layer, a first active layer, and a handle layer. The insulating layer has a first surface and a second surface. The first active layer contacts the first surface of the insulating layer. The handle layer contacts the second surface of the insulating layer. A second wafer is provided that includes a substrate and a second active layer. The substrate has a first surface and a second surface. The second active layer contacts the first surface of the substrate. The second wafer is bonded to the first wafer by physically connecting the first active layer to the second surface of the substrate. The handle layer is removed. A metal bond pad is formed on the second surface of the insulating layer. The metal bond pad is electrically connected to the first active layer.


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