The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 20, 2010
Applicants:
Shenqing Fang, Fremont, CA (US);
Tung-sheng Chen, Cupertino, CA (US);
Inventors:
Shenqing Fang, Fremont, CA (US);
Tung-Sheng Chen, Cupertino, CA (US);
Assignee:
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 21/28202 (2013.01); H01L 27/11568 (2013.01); H01L 29/518 (2013.01);
Abstract
Embodiments of the present technology are directed toward gate sidewall engineering of field effect transistors. The techniques include formation of a blocking dielectric region and nitridation of a surface thereof. After nitridation of the blocking dielectric region, a gate region is formed thereon and the sidewalls of the gate region are oxidized to round off gate sharp corners and reduce the electrical field at the gate corners.