The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 25, 2009
Hiroshi Amano, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
Myunghee Kim, Aichi, JP;
Cyril Pernot, Aichi, JP;
Akira Hirano, Aichi, JP;
Hiroshi Amano, Aichi, JP;
Satoshi Kamiyama, Aichi, JP;
Myunghee Kim, Aichi, JP;
Cyril Pernot, Aichi, JP;
Akira Hirano, Aichi, JP;
SOKO KAGAKU CO., LTD., Aichi, JP;
Abstract
A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlGaN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlGaN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.