The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Nov. 23, 2011
Chantal Arena, Mesa, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Cornville, AZ (US);
Subhash Mahajan, El Macero, CA (US);
Fanyu Meng, Tempe, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Thomas Bertram, Jr., Mesa, AZ (US);
Ed Lindow, Cornville, AZ (US);
Subhash Mahajan, El Macero, CA (US);
Fanyu Meng, Tempe, AZ (US);
SOITEC, Bernin, FR;
Abstract
Embodiments of the invention include methods for forming Group III-nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous Group III-nitride nucleation layer on a surface of a non-native growth substrate, the continuous Group III-nitride nucleation layer concealing the upper surface of the non-native growth substrate. Forming the continuous Group III-nitride nucleation layer may include forming a Group III-nitride layer and thermally treating said Group III-nitride layer. Methods may further include forming a further Group III-nitride layer upon the continuous Group III-nitride nucleation layer.