The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Feb. 21, 2014
Applicants:
Kyung-ryun Kim, Daejeon, KR;
Sang-yong Yoon, Seoul, KR;
Inventors:
Kyung-Ryun Kim, Daejeon, KR;
Sang-Yong Yoon, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G06F 11/10 (2006.01); G11C 29/02 (2006.01); G11C 29/42 (2006.01); G11C 16/34 (2006.01); G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 16/3418 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/42 (2013.01); G11C 16/00 (2013.01); G11C 2207/2254 (2013.01);
Abstract
In a method of reading data from a nonvolatile memory device, a first read operation for memory cells coupled to a first word line is performed by applying a first read voltage to the first word line, a first read retry is performed to obtain an optimal read level regardless or independent of whether data read by the first read operation is error-correctable, and the optimal read level is stored to perform a subsequent second read operation using the optimal read level. Related methods and devices are also discussed.