The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412466 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 09, 2016

Filed:

Sep. 25, 2014
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Karin Strauss, Seattle, WA (US);

Douglas C. Burger, Bellevue, WA (US);

Luis Henrique Ceze, Seattle, WA (US);

Adrian Sampson, Seattle, WA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 27/00 (2006.01); G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 27/005 (2013.01); G06F 12/0246 (2013.01); G11C 11/5628 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/06 (2013.01); G11C 16/3495 (2013.01);
Abstract

The present technology relaxes the precision (or full data-correctness-guarantees) requirements in memory operations, such as writing or reading, of MLC memories so that an application may write and read a digital data value as an approximate value. Types of MLCs include Flash MLC and MLC Phase Change Memory (PCM) as well as other resistive technologies. Many software applications may not need the accuracy or precision typically used to store and read data values. For example, an application may render an image on a relatively low resolution display and may not need an accurate data value for each pixel. By relaxing the precision or correctness requirements is a memory operation, MLC memories may have increased performance, lifetime, density, and/or energy efficiency.


Find Patent Forward Citations

Strauss, Karin. (2016). Approximate multi-level cell memory operations (U.S. Patent No. 9412466). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9412466

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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