The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Sep. 04, 2015
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Takuyo Kodama, Sagamihara, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01); G11C 7/06 (2006.01); G11C 5/14 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/30 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/10 (2013.01); G11C 5/14 (2013.01); G11C 5/145 (2013.01); G11C 5/147 (2013.01); G11C 5/148 (2013.01); G11C 7/06 (2013.01); G11C 7/12 (2013.01); G11C 11/4074 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01);
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: a first memory cell transistor; a first bit line; a first sense amplifier unit; a voltage generator; and a switch circuit. In a case where a power-supply voltage is equal to or lower than a first voltage and is higher than a second voltage when an access operation to the first memory cell transistor is started, the first sense amplifier unit is electrically disconnected from the first bit line and is electrically connected to the voltage generator via the switch circuit.