The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Apr. 07, 2014
Altera Corporation, San Jose, CA (US);
Irfan Rahim, Milpitas, CA (US);
Andy L. Lee, San Jose, CA (US);
Jeffrey T. Watt, Palo Alto, CA (US);
William Bradley Vest, San Jose, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Memory elements are provided that exhibit immunity to soft error upset events when subjected to radiation strikes such as high-energy atomic particle strikes. Each memory element may each have four inverter-like transistor pairs that form a bistable element, a pair of address transistors, and a pair of relatively weak transistors connected between two of the inverters that create a common output node which is resistant to rapid changes to its state. The transistors may be connected in a pattern that forms a bistable memory element that is resistant to soft error upset events due to radiation strikes. Data may be loaded into and read out of the memory element using the address transistor pair.