The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Dec. 16, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Ki-Chul Chun, Seongnam-si, KR;

Chul-Sung Park, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 8/12 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 8/08 (2013.01); G11C 5/147 (2013.01); G11C 8/10 (2013.01); G11C 8/12 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01);
Abstract

A semiconductor memory device includes multiple voltage generators. The memory device includes a first voltage generator for generating a first internal voltage based on a first power supply voltage, and a second voltage generator for generating a second internal voltage based on a second power supply voltage that is lower than the first power supply voltage. The first internal voltage is used as a driving voltage of a bit line sense amplifier in a core block including a memory cell array. The second internal voltage that is lower than the first internal voltage is used as a driving voltage of a peripheral circuit block other than the core block.


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