The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Aug. 21, 2013
Applicant:

Hgst Netherlands B.v., Amsterdam, NL;

Inventors:

Donald G. Allen, Morgan Hill, CA (US);

Wen-Chien D. Hsiao, San Jose, CA (US);

Quan-chiu H. Lam, San Jose, CA (US);

Ning Shi, San Jose, CA (US);

Assignee:

HGST Netherlands B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/31 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3163 (2013.01); G11B 5/3116 (2013.01); Y10T 428/1186 (2015.01);
Abstract

Depositing a seed layer for a high-moment shield onto a write pole may have a deleterious effect on the magnetic response of the write pole. Instead, an amorphous separation layer may be deposited between the write pole and the seed layer. In one embodiment, the seed layer is formed directly on the amorphous layer. In addition to separating the seed layer from the write pole, the amorphous separation layer permits the seed layer to dictate the crystallographic orientation of the shield which is subsequently deposited on the magnetic head. That is, the amorphous layer provides a substrate that allows the seed layer to have a crystalline structure independent of the layers that were deposited previously. The amorphous separation layer may comprise an amorphous metal—e.g., NiNb or NiTa—or an insulative material—e.g., alumina or silicon dioxide.


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