The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Jan. 29, 2015
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Hironori Araki, Santa Clara, CA (US);

Yoshitaka Sasaki, Los Gatos, CA (US);

Hiroyuki Ito, Sunnyvale, CA (US);

Seiichiro Tomita, Milpitas, CA (US);

Kazuki Sato, Sunnyvale, CA (US);

Hideo Mamiya, Santa Clara, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01); G11B 5/17 (2006.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 5/17 (2013.01); G11B 5/1272 (2013.01); G11B 2005/0021 (2013.01);
Abstract

A magnetic write head has a plated coil with narrow pitch and is suitable for writing at high frequencies on magnetic media with high coercivity. The narrow pitch is obtained without such disadvantages as overplating that has adversely affected prior art attempts to produce such narrow pitches. The process that produces the magnetic write head is characterized by an RIE plasma etch using O/Nto etch plating trenches into a baked layer of photoresist with the ratio of gases being 5/45 sccm so that a dilute Oconcentration does not create unwanted side etching of the plating trenches. In addition, a Cu seed layer is coated with an insulating layer of AlOwhich redeposits on the trench sidewalls to inhibit redeposition of any Cu from the seed layer and prevent outward growth of the plated Cu that would result in overplating.


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