The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Aug. 15, 2013
Applicant:

Empire Technology Development Llc, Wilmington, DE;

Inventors:

Miodrag Potkonjak, Los Angeles, CA (US);

Saro Meguerdichian, West Hills, CA (US);

Assignee:

EMPIRE TECHNOLOGY DEVELOPMENT LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5068 (2013.01); G06F 17/5009 (2013.01); H01L 27/0207 (2013.01); H01L 29/1606 (2013.01); H01L 29/66015 (2013.01);
Abstract

Techniques described herein generally include methods and systems related to the selection of a combination of graphene and non-graphene transistors in an IC design. To reduce the increase in leakage energy caused by graphene transistors, selected non-graphene transistors may be replaced with graphene transistors in the IC design while other non-graphene transistors may be retained in the IC design. To limit the number of graphene transistors in the IC design, graphene transistors may replace non-graphene transistors primarily at locations in the IC design where significant delay benefit can be realized.


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