The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Aug. 24, 2012
Applicants:
Sungjee Kim, Pasadena, CA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Inventors:
Sungjee Kim, Pasadena, CA (US);
Moungi G. Bawendi, Cambridge, MA (US);
Assignee:
MASSACHUSETTS INSTITUTE OF TECHNOLOGY, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); G01N 33/58 (2006.01); B82Y 10/00 (2011.01); B82Y 15/00 (2011.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); C09K 11/88 (2006.01); C30B 7/00 (2006.01); C30B 29/60 (2006.01); C30B 33/00 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/225 (2006.01); H01L 29/267 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
G01N 33/588 (2013.01); B82Y 10/00 (2013.01); B82Y 15/00 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); C09K 11/883 (2013.01); C30B 7/00 (2013.01); C30B 29/605 (2013.01); C30B 33/00 (2013.01); H01L 21/0237 (2013.01); H01L 21/0256 (2013.01); H01L 21/02409 (2013.01); H01L 21/02411 (2013.01); H01L 21/02521 (2013.01); H01L 21/02562 (2013.01); H01L 21/02601 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01); H01L 29/267 (2013.01); H01L 51/426 (2013.01); Y02E 10/549 (2013.01); Y10S 977/773 (2013.01); Y10S 977/774 (2013.01); Y10S 977/777 (2013.01); Y10S 977/811 (2013.01); Y10T 428/12021 (2015.01); Y10T 428/12528 (2015.01); Y10T 428/12986 (2015.01); Y10T 428/294 (2015.01); Y10T 428/2991 (2015.01); Y10T 428/315 (2015.01);
Abstract
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.