The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Sep. 23, 2011
Xiaoying Meng, Shanghai, CN;
Junqing Zhou, Shanghai, CN;
Haiyang Zhang, Shanghai, CN;
Abstract
A method of manufacturing semiconductor device and a wafer are provided in accordance with embodiments of the present invention, which relates to semiconductor technology. The method includes: providing a substrate, and forming a gate oxide layer and a polysilicon layer on a first surface of the substrate; etching the polysilicon layer by use of a patterned mask so as to form a polysilicon gate with reentrants; depositing a tensile stress film on a second surface of the substrate before etching the polysilicon layer. The tensile stress film can be deposited on the second surface of the substrate for generating the tensile stress for the wafer. Thus, a polysilicon gate with reentrants can be formed in etching process. In this way, semiconductor devices can have smaller gate-source/drain overlap capacitance and better TDDB parameters, and the performance of the devices can be improved.