The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Feb. 25, 2013
Applicant:

Ceratizit Austria Gesellschaft Mbh, Reutte, AT;

Inventor:

Christoph Czettl, Poels, AT;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C01B 35/08 (2006.01); B22D 11/12 (2006.01); B22D 11/128 (2006.01); C23C 16/44 (2006.01); C23C 16/56 (2006.01); C23C 30/00 (2006.01); C23C 28/04 (2006.01); B23B 27/14 (2006.01); C23C 16/32 (2006.01); C23C 16/34 (2006.01); C23C 16/38 (2006.01); C23C 16/40 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C01B 35/08 (2013.01); B22D 11/1206 (2013.01); B22D 11/1287 (2013.01); B23B 27/14 (2013.01); C23C 16/30 (2013.01); C23C 16/32 (2013.01); C23C 16/34 (2013.01); C23C 16/38 (2013.01); C23C 16/403 (2013.01); C23C 16/44 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); C23C 28/042 (2013.01); C23C 28/044 (2013.01); C23C 30/005 (2013.01); B23B 2222/28 (2013.01); B23B 2228/04 (2013.01); B23B 2228/105 (2013.01); Y10T 428/265 (2015.01);
Abstract

A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70≦X≦1.0, preferably 0.75≦X≦0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.


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