The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Oct. 03, 2013
Applicant:

Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-do, KR;

Inventors:

Nam-shik Kim, Seoul, KR;

Dae-wook Kim, Osan-si, KR;

Bi-woong Chung, Yongin-si, KR;

Jun-jin Kong, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01); H03M 13/09 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
H03M 13/095 (2013.01); G06F 11/1004 (2013.01); H03M 13/09 (2013.01); H03M 13/091 (2013.01);
Abstract

A method of performing a cyclic redundancy check (CRC) operation in a memory system, and a memory controller that uses the same. The method includes initializing a linear feed-back shift register (LFSR) circuit in a CRC polynomial, generating CRC parity information with respect to input data to be stored in a memory device by using the LFSR circuit, and generating a CRC code with respect to the input data based on the CRC parity information, such that the initialization of the LFSR circuit is set such that a register initial value of the LFSR circuit is determined to satisfy a condition that, when data input to the LFSR circuit is first state information, the CRC parity information generated from the LFSR circuit is second state information.


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