The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Sep. 03, 2015
Applicant:

Feeling Technology Corp., Hsinchu, TW;

Inventor:

Hsuan-Chuan Chen, Hsinchu, TW;

Assignee:

Feeling Technology Corp., Chupei, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02P 6/00 (2016.01); H02P 27/08 (2006.01); H02P 7/29 (2016.01);
U.S. Cl.
CPC ...
H02P 27/08 (2013.01); H02P 7/04 (2016.02); H02P 7/29 (2013.01);
Abstract

In a driving switching system, an H-bridge circuit includes a first P-type MOSFET, a first N-type MOSFET, a second P-type MOSFET and a second N-type MOSFET. The first N-type MOSFET connects to the first P-type MOSFET so as to have a first connection terminal. The second N-type MOSFET connects to the second P-type MOSFET so as to have a second connection terminal, wherein the first connection terminal and the second connection terminal are connected to a coil. A first and a second kickback voltage detection module respectively detect a first kickback voltage at the first connection terminal and a second kickback voltage at the second connection terminal. In the accompanying method, a first and a second driving module are selectively used to switch the first and second P-type MOSFET and the first and second N-type MOSFET once the first and second kickback voltages reach a first or a second threshold voltage.


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