The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Aug. 02, 2012
Shigeyuki Takagi, Kanagawa-ken, JP;
Hidehiko Yabuhara, Kanagawa-ken, JP;
Akira Maekawa, Kanagawa-ken, JP;
Takayoshi Fujii, Kanagawa-ken, JP;
Yasutomo Shiomi, Kanagawa-ken, JP;
Shigeyuki Takagi, Kanagawa-ken, JP;
Hidehiko Yabuhara, Kanagawa-ken, JP;
Akira Maekawa, Kanagawa-ken, JP;
Takayoshi Fujii, Kanagawa-ken, JP;
Yasutomo Shiomi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.