The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Feb. 26, 2015
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Yuko Kawata, Kanagawa, JP;

Hiroshi Kadoma, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Satoshi Seo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07D 333/76 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0052 (2013.01); C07D 333/76 (2013.01); H01L 51/0074 (2013.01); H01L 51/508 (2013.01); H01L 51/006 (2013.01); H01L 51/0085 (2013.01); H01L 51/5016 (2013.01);
Abstract

A novel compound having high triplet excitation energy and a bipolar property is provided. Specifically, a phenanthrene compound represented by General Formula (G1) is provided where Rto Rand Rto Rseparately represent any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, Ar represents a substituted or unsubstituted arylene group having 6 to 13 carbon atoms, and Z represents a sulfur atom or an oxygen atom. The use of the phenanthrene compound as a host material of a light-emitting layer in the presence of a phosphorescent dopant allows the formation of a light-emitting element with high current efficiency.


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