The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jun. 30, 2014
Applicants:

Shinhee Han, Seongnam-si, KR;

Daeeun Jeong, Yongin-si, KR;

Yong Kwan Kim, Yongin-si, KR;

Yoonjong Song, Hwaseong-si, KR;

Inventors:

Shinhee Han, Seongnam-si, KR;

Daeeun Jeong, Yongin-si, KR;

Yong Kwan Kim, Yongin-si, KR;

Yoonjong Song, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 27/228 (2013.01);
Abstract

Provided are a magnetic memory device and a method of fabricating the same. The device may include a cell selection device, a magnetic tunnel junction (MTJ), and a lower electrode connecting them. The lower electrode may include a vertical portion and a horizontal portion laterally extending from a side surface of the vertical portion. In the lower electrode, the vertical portion has a top surface higher than the horizontal portion and has a top surface including at least two parallel sides and other side at an angle thereto. The MTJ may be provided on the vertical portion of the lower electrode.


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