The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Dec. 21, 2011
Applicants:

Tobias Gebuhr, Regensburg, DE;

Hans-christoph Gallmeier, Regensburg, DE;

Herbert Brunner, Sinzing, DE;

Kirstin Petersen, Regensburg, DE;

Inventors:

Tobias Gebuhr, Regensburg, DE;

Hans-Christoph Gallmeier, Regensburg, DE;

Herbert Brunner, Sinzing, DE;

Kirstin Petersen, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/54 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/50 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2224/24 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.


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