The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jul. 27, 2015
Playnitride Inc., Tainan, TW;
Yen-Lin Lai, Tainan, TW;
Jyun-De Wu, Tainan, TW;
PlayNitride Inc., Tainan, TW;
Abstract
A nitride semiconductor structure including a substrate, a first type nitride semiconductor layer disposed on the substrate, an active layer disposed between the substrate and the first type nitride semiconductor layer and a second type nitride semiconductor layer disposed between the substrate and the active layer is provided. The active layer includes a first multiple quantum well structure including a plurality of first quantum well layers and a plurality of first barrier layers staggered with each other, and a second multiple quantum well structure including a plurality of second quantum well layers and a plurality of second barrier layers staggered with each other. A second type dopant is doped into at least one of the second barrier layers, and a concentration of the second dopant in the second barrier layer is higher than that of the second dopant in the second type nitride semiconductor layer.