The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Mar. 18, 2013
Applicant:
Nec Corporation, Tokyo, JP;
Inventors:
Junichi Fujikata, Tokyo, JP;
Takahiro Nakamura, Tokyo, JP;
Assignee:
NEC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/108 (2006.01); H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1085 (2013.01); H01L 27/14625 (2013.01); H01L 31/02327 (2013.01); H01L 31/0368 (2013.01); H01L 31/0376 (2013.01); G02B 6/12004 (2013.01);
Abstract
A waveguide-coupled MSM-type photodiode of the present invention comprises a structure in which a semiconductor light-absorbing layer and an optical waveguide core layer are adjacent and optically coupled to each other, has formed metal-semiconductor-metal (MSM) junctions which are arranged at an interval on the semiconductor light-absorbing layer, and is characterized in that of the MSM electrodes arranged at the interval, a voltage is set so that a reverse bias is applied to those MSM electrodes that are arranged on a light incidence side.