The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Sep. 12, 2013
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Kenichi Umeda, Ashigarakami-gun, JP;
Takamichi Fujii, Ashigarakami-gun, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is N(W/mK), a thermal conductivity of the heat diffusion layer is N(W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0≦R≦1), and S=T×R, the thermal conductivity Nof the substrate satisfies the condition N<1.8, and the thermal conductivity Nof the heat diffusion layer satisfies the conditions N>3.0×S^(−0.97×e^(−1.2×N)) and N≧N.