The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Dec. 15, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Katsushige Yamashita, Osaka, JP;

Shigetaka Aoki, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01);
Abstract

A semiconductor device includes a second conductivity type back gate electrode formed within a body area, and electrically connected with the body area, and performs bidirectional current control in a direction from a drain area to a source area and in a direction from the source area to the drain area. A sheet resistance of the back gate electrode is lower than a sheet resistance of the body area. The source area and the back gate electrode are disposed apart from each other with a clearance sufficient for preventing a breakdown phenomenon caused between the source area and the back gate electrode when a maximum operation voltage is applied between the source area and the drain area.


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