The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Oct. 22, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Doo Hyoung Lee, Suwon-si, KR;
Bo Sung Kim, Seoul, KR;
Chan Woo Yang, Siheung-si, KR;
Seung-Ho Jung, Yongin-si, KR;
Yeon Taek Jeong, Seoul, KR;
June Whan Choi, Seoul, KR;
Tae-Young Choi, Seoul, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.