The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Mar. 24, 2015
Imec Vzw, Leuven, BE;
Samsung Electronics Co. Ltd., Suwon-si, Gyeonggi-do, KR;
Seung Hun Lee, Seoul, KR;
Geert Eneman, Balen, BE;
IMEC VZW, Leuven, BE;
Samsung Electronics Co. Ltd., Gyeonggi-do, KR;
Abstract
A method for manufacturing a transistor device comprising a channel layer is disclosed. In one example, the method includes providing a substrate, epitaxially growing a strained layer on the substrate (defect free), epitaxially growing the channel layer on the epitaxially grown strained layer, and providing a gate structure on the channel layer. In this example, the method also includes selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate. The protrusion may comprise a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, and may allow for elastic relaxation in the portions.