The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Nov. 25, 2014
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yoshiya Moriyama, Osaka, JP;

Hiromasa Fujimoto, Toyama, JP;

Kosaku Saeki, Osaka, JP;

Nobuyoshi Takahashi, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/00 (2006.01); H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 21/265 (2013.01); H01L 27/14612 (2013.01); H01L 27/14665 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 29/0847 (2013.01); H01L 29/42376 (2013.01); H01L 21/324 (2013.01);
Abstract

A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.


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