The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Mar. 04, 2014
Silicon Optronics, Inc., Hsinchu, TW;
Yu-Yuan Yao, Hsinchu, TW;
SILICON OPTRONICS, INC., Hsinchu, TW;
Abstract
The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate located at one side of the channel, a voltage transfer region formed in the substrate located at the other side of the channel, a first gate dielectric layer formed on the substrate, a second gate dielectric layer formed on the substrate, wherein the first gate dielectric layer and the second gate dielectric layer have a joint above the channel, and the thickness of the first gate dielectric layer is thicker than that of the second gate dielectric layer, and a gate formed on the first gate dielectric layer and the second gate a is dielectric layer. The present invention also provides a method for fabricating the image sensor device.