The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Oct. 22, 2014
Applicant:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Inventors:
Eric S. Shapiro, San Diego, CA (US);
Matt Allison, San Diego, CA (US);
Assignee:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/82 (2006.01); H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 27/027 (2013.01); H01L 27/0288 (2013.01); H01L 27/0251 (2013.01); H01L 27/0262 (2013.01); H01L 29/1095 (2013.01);
Abstract
Embodiments of systems, methods, and apparatus for improving ESD tolerance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on semiconductor-on-insulator and silicon-on-sapphire substrates. Embodiments provide an improved FET structure having an accumulated charge sink (ACS) circuit, fast switching times, and improved ESD tolerance.