The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Dec. 23, 2013
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Gilberto Curatola, Villach, AT;

Oliver Haeberlen, Villach, AT;

Walter Rieger, Villach, AT;

Anthony Sanders, Weissenfeld, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H03K 17/567 (2006.01); H01L 29/20 (2006.01); H01L 27/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0883 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H03K 17/567 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/41758 (2013.01); H01L 29/4236 (2013.01);
Abstract

One aspect relates to a semiconductor component with a semiconductor body, a first main contact pad, a second main contact pad, a normally-on first transistor monolithically integrated in the semiconductor body and a normally-off second transistor monolithically integrated in the semiconductor body. The first transistor is a high electron mobility transistor having a first gate electrode and a first load path controllable via a first gate electrode, and the second transistor has a second gate electrode and a second load path controllable via the second gate electrode. The first load path and the second load path are electrically connected in series between the first main contact pad and the second main contact pad.


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