The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Feb. 26, 2015
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
TingGang Zhu, Cupertino, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Ping Huang, Shanghai, CN;
Yueh-Se Ho, Sunnyvale, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A circuit includes a vertical conduction gallium nitride-based Schottky diode and a vertical conduction silicon based PN junction diode connected in parallel. The Schottky diode and the PN junction diode are packaged in the same semiconductor package and the PN junction diode does not conduct in response to the Schottky diode being forward biased. In some embodiments, the silicon based PN junction diode has a breakdown voltage lower than a breakdown voltage of the gallium nitride-based Schottky diode. The silicon based PN junction diode enters breakdown in response to the gallium nitride-based Schottky diode being reverse biased to divert a reverse bias avalanche current away from the gallium nitride-based Schottky diode.