The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Jan. 22, 2013
Applicant:

Koito Manufacturing Co., Ltd., Tokyo, JP;

Inventors:

Shogo Sugimori, Shizuoka, JP;

Osamu Kuboyama, Shizuoka, JP;

Hisayoshi Daicho, Shizuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 25/13 (2006.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01); F21K 99/00 (2016.01); H01L 25/075 (2006.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 25/13 (2013.01); F21K 9/00 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 33/58 (2013.01); H01L 25/0753 (2013.01); H01L 33/54 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor light-emitting device has a substrate, one or more semiconductor light-emitting elements provided on the substrate, and that emit light having a peak wavelength in a 380 nm to 480 nm wavelength region, and a molded member covering the semiconductor light-emitting element, and containing a phosphor that emits visible light by being excited by the emitted light from the semiconductor light-emitting element. The molded member is formed so that index A=H/(s/n) satisfies 0.3≦A≦6, where H is the height [mm] of the molded member from the substrate, s is the square root [mm] of the contact area between the substrate and the molded member, and n is the number of the semiconductor light-emitting elements covered with the molded member.


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