The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Mar. 13, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Masahiro Matsumoto, Kanagawa, JP;

Kazuyoshi Maekawa, Kanagawa, JP;

Masahiko Fujisawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 22/32 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/45 (2013.01); H01L 24/85 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48664 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85207 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1306 (2013.01);
Abstract

A semiconductor device in which reliability of a bonding pad to which a conductive wire is bonded is achieved. A bonding pad having an OPM structure is formed of an Al—Cu alloy film having a Cu concentration of 2 wt % or more. By increasing the Cu concentration, the Al—Cu alloy film forming the bonding pad is hardened. Therefore, the bonding pad is difficult to be deformed by impact in bonding of a Cu wire, and deformation of an OPM film as following the deformation of the bonding pad can be reduced. In this manner, concentration of a stress on the OPM film caused by the impact from the Cu wire can be reduced, and therefore, the breakage of the OPM film can be prevented.


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