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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406591 B1

PDFFull Text
Date of Patent:
Aug. 02, 2016

Filed:

Aug. 12, 2015

Semiconductor device and method for manufacturing the same

Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Akihiro Kimura, Kyoto, JP;

Tsunemori Yamaguchi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Jasmine Clark

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49541 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 23/49513 (2013.01); H01L 23/49551 (2013.01); H01L 24/32 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 23/3135 (2013.01); H01L 24/48 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/17738 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor deviceincludes a first insulating materialattached to a second main surfaceof a semiconductor chip, and a second insulating materialattached to side surfaces of the semiconductor chip, the first insulating materialand an island. The semiconductor chipis fixed to the islandvia the first insulating materialand the second insulating material. The first insulating materialensures a high dielectric strength between the semiconductor chipand the island. Though the second insulating materialhaving a modulus of elasticity greater than that of the first insulating material, the semiconductor chipis firmly attached to the island

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