The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Oct. 31, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 27/0883 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/78 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/4236 (2013.01);
Abstract
A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in a vertical direction.